論文 - 梅津 郁朗
-
Strong mid-infrared optical absorption emerged by supersaturated sulfur doping in silicon wafer 査読あり
I. Umezu, A. Kohno, J. M. Warrender, Y. Takatori, Y.Hirao, S. Nakagawa, A. Sugimura, S. Charnvanichborikarn, J. S. Williams and M. J. Aziz
Proceedings of 30th International Conference on the Physics of Semiconductors 1399 51 - 52 2011年1月
単著
-
Effect of Non-equilibrium Pulsed Ejection of Si Species into Background Gas on the Formation of Si Nanocrystallite 査読あり
Ikurou Umezu, Shunto Okubo , Akira Sugimura
Mater. Res. Soc. Symp. Proc. 1035 2011年1月
共著
担当区分：筆頭著者
-
Development of precise tuning method of inter-dot spacing and resonant energy transfer between Au clusters
Inada Mitsuru, Yoshihara Yoshihiro, Kawasaki Hideya, Iwasaki Yasuhiko, Saitoh Tadashi, Umezu Ikurou, Sugimura Akira
NANOPHOTONIC MATERIALS VIII 8094 2011年
-
Roles of SiH4 in Growth, Structural Changes and Optical Properties Of Nanocrystalline Silicon Thin Films
Ali A. M., Inokuma T., Al-Hajry A., Kobayashi H., Umezu I., Morimoto A.
PROCEEDINGS OF THE FIFTH SAUDI PHYSICAL SOCIETY CONFERENCE (SPS5) 1370 2011年
-
Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon
Umezu I., Kohno A., Warrender J. M., Takatori Y., Hirao Y., Nakagawa S., Sugimura A., Charnvanichborikarn S., Williams J. S., Aziz M. J.
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 1399 2011年
-
Effect of non-equilibrium pulsed ejection of Si species into background gas on the formation of Si nanocrystallite and nanocrystal-film
Ikurou Umezu, Shunto Okubo, Akira Sugjmura
Materials Research Society Symposium Proceedings 1305 13 - 18 2011年
共著
The Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes duringpulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure. © 2011 Materials Research Society.
DOI： 10.1557/opl.2011.87
-
ガス中パルスレーザアブレーションでのSiナノ構造の生成過程に対するパルス励起の効果
梅津郁朗
レーザ加工学会誌 17 93 2010年11月
単著
担当区分：筆頭著者
-
Emission induced by collision of two plumes during pulsed laser ablation 査読あり
I. Umezu, S. Yamamoto and A. Sugimura
Applied Physics A: Materials Science & Processing 101 133 - 136 2010年11月
共著
担当区分：筆頭著者
-
Formation of core-shell structured silicon nanoparticles during pulsed laser Ablation 査読あり
I. Umezu, Y. Nakayama and A. Sugimura
J. Appl. Phys. 2010年11月
共著
-
Inter-Dot Distance Dependence of Photoluminescence Properties in CdSe Quantum Dot Systems
K. Tai, W. Lü, I. Umezu and A. Sugimura
Appl. Phys. Express 3 035202 2010年11月
共著
担当区分：筆頭著者
-
Fabrication and Sub-Bandgap Optical Properties of Silicon Supersaturated with Chalcogens by Ion Implantation and Pulsed Laser Melting 査読あり
Fabrication and Sub-Bandgap Optical Properties of Silicon Supersaturated with Chalcogens by Ion Implantation and Pulsed Laser Melting
B. P. Bob, A. Kohno, S. Charnvanichborikarn, J. M. Warrender, I. Umezu, M. Tabbal, J. S. Williams and M. J. Aziz 107 123506 2010年11月
共著
-
Emission induced by collision of two plumes during pulsed laser ablation
Umezu Ikurou, Yamamoto Shigeki, Sugimura Akira
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 101 ( 1 ) 133 - 136 2010年10月
-
Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
Bob Brion P., Kohno Atsushi, Charnvanichborikarn Supakit, Warrender Jeffrey M., Umezu Ikurou, Tabbal Malek, Williams James S., Aziz Michael J.
JOURNAL OF APPLIED PHYSICS 107 ( 12 ) 2010年6月
-
Formation of core-shell structured silicon nanoparticles during pulsed laser ablation
Umezu Ikurou, Nakayama Yusuke, Sugimura Akira
JOURNAL OF APPLIED PHYSICS 107 ( 9 ) 2010年5月
-
Inter-Dot Distance Dependence of Photoluminescence Properties in CdSe Quantum Dot Systems
Tai Kohei, Lue Wei, Umezu Ikurou, Sugimura Akira
APPLIED PHYSICS EXPRESS 3 ( 3 ) 2010年
-
Synthesis of Ni-doped InTaO4 nanocrystallites by reactive pulsed laser ablation for application to visible-light-operating photocatalysts 査読あり
Takehito Yoshida, Hirokazu Toyoyama, I Umezu, Akira Sugimura
Applied surface science 255 9634 - 9637 2009年11月
共著
-
Trap state emission of water-soluble CdS nanocrystals 査読あり
W Lü, Y Tokuhiro, I Umezu, A Sugimura, Y Nagasaki
phys. stat. sol. (c) 6 346 - 349 2009年11月
共著
-
Synthesis of Ni-doped InTaO4 nanocrystallites by reactive pulsed laser ablation for application to visible-light-operating photocatalysts
Yoshida Takehito, Toyoyama Hirokazu, Umezu Ikurou, Sugimura Akira
APPLIED SURFACE SCIENCE 255 ( 24 ) 9634 - 9637 2009年9月
-
Fluorescence Resonance Energy Transfer and Concentration Quenching Effect in CdSe Quantum Dot System
Kohei Tai, Wei Lu, Ikurou Umezu, A Sugimura
Mem. konan Univ. , Sci. &Eng Ser. 56 11 2009年4月
共著
-
Effect of Phosphorus Ion Doping for Silicon Nanocrystal Assembly
Kei Hirata, Manabu Gibo, Kenichi Yoshida, Mitsuru Inuda, Ikurou Umezu, Shinji Nagamachi, Tadashi Saitoh, Akira Sugimura
Mem. konan Univ. , Sci. & Eng Ser. 56 2009年4月
共著