写真a

TERAUCHI Mamoru

Position

Professor

Degree

PhD in Science (Physics)(The University of Tokyo), MSc (Physics)(The University of Tokyo), BSc (Physics)(The University of Tokyo)

Research Field

Science Literacy Education, Science / Technology in "Context", Semiconductor Integrated Circuits, Information Literacy Education, Informatics / Theory of informatics

External Link

Graduating School 【 display / non-display

  • The University of Tokyo   Faculty of Science   Department of Physics   Graduated

    1981.4 - 1985.3

Graduate School 【 display / non-display

  • The University of Tokyo   Graduate School, Division of Science   Department of Physics   Doctor's Course   Completed

    1987.4 - 1990.3

  • The University of Tokyo   Graduate School, Division of Science   Department of Physics   Master's Course   Completed

    1985.4 - 1987.3

Campus Career 【 display / non-display

  • KONAN UNIVERSITY   Hirao School of Management   Hirao School of Management Department of Management   Professor

    2017.4

  • KONAN UNIVERSITY   Hirao School of Management   Hirao School of Management Department of Management   Associate Professor

    2013.4 - 2017.3

External Career 【 display / non-display

  • Faculty of Information Sciences, Hiroshima City University   Associate Professor

    1998.4 - 2013.3

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    Country:Japan

  • Toshiba R&D Center   ULSI Research Laboratory

    1990.4 - 1998.3

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    Country:Japan

  • Doctoral Course (DC) Research Fellow, Japan Society for the Promotion of Science

    1989.4 - 1990.3

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    Country:Japan

Professional Memberships 【 display / non-display

  • Senior Member of Electron Devices Society (EDS), IEEE (The Institute of Electrical and Electronics Engineers)

    2003.11

  • Senior Member of Information Processing Society of Japan

    2019.10

  • The Physical Society of Japan

    1985.4

  • The Japan Society of Applied Physics

    1986.4

  • The Institute of Electrical and Electronics Engineers (IEEE)

    1996.4

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Papers 【 display / non-display

  • [Research Notes] Research Memo on the Current State of the Japanese Economy (as of Jan., 2025) (in Japanese)

    Mamoru Terauchi and Kaede Terauchi

    Hirao School of Management Review   15   1 - 22   2025.3

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    Joint Work

    Authorship:Lead author  

    DOI: https://doi.org/10.14990/0002000644

  • "Limitations of the 'S-Curve of Technological Development' Perspective in 'The Innovation Dilemma' — A Comment from Engineers on 'Technology Management Theory' by Those Who Lack Detailed Understanding of 'Technology'" (in Japanese)

    Mamoru Terauchi, Kaede Terauchi

    Hirao School of Management Review   14 ( 1 )   1 - 12   2024.3

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    Joint Work

    Authorship:Lead author, Corresponding author  

    C. M. Christensen's perspective of the "S-Curve of Technological Development" is a cornerstone of his book "The Innovator's Dilemma." This paper examines why the "S-Curve of Technological Development" takes an "S" shape and discusses the limitations of a perspective that lacks detailed understanding of technology, using aspects that Christensen "could not see" as its subject. Next, it illustrates cases where manufacturers have succeeded by deliberately abandoning existing technologies. Finally, it points out that even if sustained innovation becomes impossible, once a technology has become indispensable to the infrastructure of modern society (even if it has become unappealing to managers and investors), it must be maintained at a minimum, and if possible, inherited in a way that "reduces the cost associated with its realization."

    DOI: https://doi.org/10.14990/0002000125

  • Literacy regarding basic human functions: survey results for university freshmen — Why do Japanese people continue to wear masks even outdoors? (in Japanese)

    Mamoru & Kaede Terauchi

    Hirao School of Management Review   13   53 - 68   2023.3

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    Joint Work

    Authorship:Lead author, Corresponding author  

    On January 20, 2023, as the eighth wave of COVID-19 (SARS-CoV-2 infection) in Japan has yet to subside, the Prime Minister instructed the Minister of Health, Labour and Welfare to consider changing the classification of SARS-CoV-2 infection under the Infectious Diseases Control Law. But just how much basic knowledge do Japanese citizens have about infectious diseases? As of early 2023, with over 300 deaths from SARS-CoV-2 infection being reported daily (excluding days equivalent to hospital holidays), how accurately do people recognize the knowledge of "infectious diseases" and the "immune system of the human body" that they should have learned by high school? This report presents the results of a longitudinal survey conducted among first-year university students who enrolled after the start of the COVID-19 pandemic.

    DOI: http://doi.org/10.14990/00004472

  • "Art" from the perspective of "communicated information" (in Japanese)

    Mamoru & Kaede Terauchi

    Hirao School of Management Review   13   35 - 51   2023.3

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    Joint Work

    Authorship:Lead author, Corresponding author  

    Art is defined as a method of information transmission sent from a creator (sender) to a receiver, and artistic expression and artwork are information shared between the creator and the receiver. By considering the invention and evolution of the "recording media" (expression media) used in artistic expression and artwork, as well as the receivers of that artistic expression and artwork and the "cost bearers" related to it, one can understand that the changes in art and artwork from ancient Greece to the present day have been rationally carried out, regardless of whether they are in the East or the West.

    DOI: http://doi.org/10.14990/00004471

  • Considering Japan's COVID-19 Response from the Perspective of the "SIRS Epidemic Model" (in Japanese)

    Mamoru & Kaede Terauchi

    Hirao School of Management Review   13   1 - 17   2023.3

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    Joint Work

    Authorship:Lead author, Corresponding author  

    The cumulative number of deaths from SARS-CoV-2 infection in Japan as of 2022 exceeded 39,000, and as of January 15, 2023, it is over 2,900 per week, with no peak in sight (the same applies to the increase in newly confirmed infections). Considering that one year consists of 52 weeks, this means that there is a possibility that more than 100,000 lives will be lost to SARS-CoV-2 infection in 2023. However, such reports are completely absent. Despite the fact that the effectiveness of vaccinations is known to wane over time, the rate of additional vaccinations is stagnant. As we approach the third "end-of-year and New Year's period without movement restrictions," we predict what it will bring (as of the end of January 2023).

    DOI: http://doi.org/10.14990/00004469

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Books and Other Publications 【 display / non-display

  • Translation of 'Taur &Ning: "Fundamentals of Modern VLSI Devices (3rd. ed.)"' (in Japanese)

    T. Miyamoto, K. Uchida, K. Takeuchi and M. Terauchi( Role: Joint translator ,  Chap.7 (SOI MOSFET and double gate MOSFE) & Chap.12 (Memory Devices))

    Maruzen Shuppan  2024.10  ( ISBN:9784621310267

  • Textbook of "Information Literacy" for University Freshmen (in Japanese)

    Kitakami, Terauchi, Ooba, Soushi, Baba, Nakano, Nishi( Role: Joint author ,  Chap.1 (Information and its implication to our societies), Chap.8 (Information communication), Appendix 1 (Japanese National Standards that define what must be taught in elementary, junior high, and high school curricula))

    2013.10  ( ISBN:978-4-901903-83-7

  • "Information Literacy" textbook, 3rd. ed. (in Japanese)

    Terauchi, Nakano, Kosaki, Kohno( Role: Joint author ,  Chap.4 (Information retrieval through web browsers), Chap.5 (Communication through e-mails), Chap.6 (How to use word processors for making documents), Chap.12 (Information publishing via homepages), Appendix (For what reason should we learn how to use IT tools?))

    2010.4  ( ISBN:978-4-88730-987-6

  • Science of "Silicon-on-Insulator" Devices and Materials (in Japanese)

    Demizu, Oomi, Matsumura, Nakai, Katayama, Yonehara, Sakaguchi, Tate, Nakano, Tsuchiya, Terauchi, et. al.( Role: Joint author ,  Device Simulation)

    2000.4  ( ISBN:978-4898080221

  • Encyclopedia of Applied Physics Terms (in Japanese)

    by 280 sbecialists in total( Role: Joint author ,  about 40 subjects (silicon MOSFET related))

    1998.4  ( ISBN:9784274023644

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Industrial property rights 【 display / non-display

  • Semiconductor devices and method of fabrication thereof (in Japanese)

    Yoshimi, Terauchi, Inaba, Shigyo, Matsuzawa, Murakoshi, Matsushita, Nishiyama, Arisumi, Aoki, Abu, Ozaki, Hamamoto, Ishibashi

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    Patent/Registration no:特許第4047098号

    Country of applicant:Domestic  

    The present invention is characterized by providing a structure and manufacturing method for a semiconductor device, such as an integrated circuit, that includes an insulated gate type transistor, such as a MOSFET, which has a narrow bandgap region in at least one of the first or second main electrode regions, and using this insulated gate type transistor.

  • Light-emitting element and method of fabrication thereof

    G.Hatakoshi, H.Fujimoto, M.Terauchi

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    Patent/Registration no:U.S.Patent 6,835,963

    Country of applicant:Foreign country  

    This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.

  • Light emitting element and method of fabrication thereof (in Japanese)

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    Patent/Registration no:特許第3559453号

    Country of applicant:Domestic  

    The essence of the present invention lies in enabling the realization of good beam characteristics that can be used in optical disk systems and the like by integrating a wavefront conversion section into a short-wavelength light-emitting device. Specifically, the light-emitting device of the present invention is characterized by comprising a light-emitting section made of a nitride semiconductor and a first wavefront conversion section that converts the radiation shape of the light emitted from the light-emitting section into a radiation shape smaller than its wavelength and emits it as output light.

  • Light emitting element and method of fabrication thereof

    G.Hatakoshi, H.Fujimoto, M.Terauchi

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    Patent/Registration no:U.S.Patent 6,611,003

    Country of applicant:Foreign country  

    This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.

  • Semiconductor devices and method of fabrication thereof (in Japanese)

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    Patent/Registration no:特許第3431353号

    Country of applicant:Domestic  

    The present invention aims to provide a semiconductor device and its manufacturing method that are less prone to leakage current and have low manufacturing costs. The semiconductor device according to the first invention is a semiconductor device that includes a field-effect transistor formed on a composite substrate consisting of a dielectric layer and a semiconductor layer formed on a semiconductor substrate. It comprises multiple element regions in which a field-effect transistor with a first conductivity type source-drain region is formed in the semiconductor layer, an element isolation region formed in the semiconductor layer to separate the multiple element regions, and a first impurity region of the second conductivity type, which is doped with impurities and formed in a region where the thickness around the outer edge of the element region is thin. Additionally, it includes a second impurity region of the second conductivity type formed in the vicinity of the surface of the semiconductor substrate, in a region covered by the first impurity region and the element isolation region, such that the boundary between the source-drain region of the first impurity region and the second impurity region is aligned in planar position with the peripheral region.

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Committee Memberships 【 display / non-display

  • 2014.4 - 2020.3   Silicon Technology Division, The Japan Society of Applied Physics  Chair of ULSI Device Research Committee

  • 2002.9 - 2005.1   The Japan Society of Applied Physics  Invited Editor, Japanese Journal of Applied Physics (SSDM)

  • 2002.1 - 2004.12   Silicon Technology Division, The Japan Society of Applied Physics  Program committee member of International Confefence on Solid-State Devices and Materials

  • 2001.1 - 2020.3   Silicon Technology Division, The Japan Society of Applied Physics  Member of ULSI Device Research Committee

Social Activities 【 display / non-display

  • Science/Technology Counselor for citizens in Hiroshima (Hiroshima City)

    Role(s): Panelist, Presenter, Lecturer, Advisor, Planner, Organizing member

    2005.4 - 2011.3

 

Qualification acquired 【 display / non-display

  • High School Teacher Specialization License

  • Junior High School Teacher Specialization License

  • Technical Engineer (network)/Network Specialist

  • Amateur First-Class Radio Operator

  • Health Supervisor (first kind)

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Teacher organization examination execution 【 display / non-display

  • 2017.4   Konan University   Hirao School of Management   Professor

  • 1998.4   Hiroshima City University   Associate Professor