Papers - KOBORI Hiromi
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Experimental Studies of Cyclotron Resonance Line-width in the Quantum Limit for Semiconductors
Hiromi Kobori
Journal of the Physical Society of Japan 59 2141 - 2178 1989.3
Joint Work
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Far-infrared cyclotron resonance studies of impurity scattering in ge, gaas and insb Reviewed
Hiromi Kobori, Tyuzi Ohyama, Eizo Otsuka
Proceedings of SPIE - The International Society for Optical Engineering 1039 447 - 448 1988.11
Joint Work
Contribution of impurity scattering to the electron cyclotron resonance linewidth (inverse relaxation time) has been studied in the quantum limit, after subtracting the contribution of phonon scattering, for typical semiconductors Ge, GaAs and InSb. To our surprise, dependence of inverse relaxation time on temperature, magnetic field and impurity concentration is the same for neutral and ionized impurities. © 1988 SPIE.
DOI: 10.1117/12.978533
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Quantum limit electron-phonon scattering studies in semiconductors by far-infrared cyclotron resonance Reviewed
H. Kobori, T. Ohyama, E. Otsuka
Proceedings of SPIE - The International Society for Optical Engineering 1039 445 - 446 1988.11
Joint Work
Extensively systematic studies of the cyclotron resonance linewidth in the quantum limit have been performed on electron-phonon scattering in basic semiconductors (Ge, CdS, GaAs). Far-infrared (119 to 513 μm) laser cyclotron resonance experiments have been carried out in photo-excitation by pulsed band gap light or in thermal excitation. We present the temperature and magnetic field dependences of cyclotron resonance linewidth for electron-phonon scattering in the quantum limit with respect to various samples. © 1988 SPIE.
DOI: 10.1117/12.978532
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Quantum limit cyclotron resonance in Ge - acoustic deformation potential scattering - Reviewed
H. Kobori, T. Ohyama, E. Otsuka
Solid State Communications 64 ( 1 ) 35 - 39 1987.10
Joint Work
Electron cyclotron resonance linewidth in pure Ge has been studied for acoustic deformation potential scattering in the quantum limit. The relaxation time derived therefrom is obtained as a function of temperature (10 to 160 K) and magnetic field (17 to 75 kG). The inverse relaxation time for acoustic deformation potential scattering in the quantum limit is found to be proportional to temperature and to the square root of the magnetic field. These experimental results are explained qualitatively by Meyer's prediction. © 1987.
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Electron scattering in gaas at the quantum limit Reviewed
Tyuzi Ohyama, Hiromi Kobori, Eizo Otsuka
Japanese Journal of Applied Physics 25 ( 10 R ) 1518 - 1528 1986.10
Joint Work
A number of new features of electron quantum transport have been disclosed in the systematic time-resolved cyclotron resonance of GaAs in the far-infrared. The temperature dependence of electron-phonon scattering, magnetic field and concentration dependence of the electron-neutral donor scattering and electron-density dependence of carrier-carrier scattering have been investigated. Available theories give no good relationship with our observations regarding electron- phonon type scattering. The electron-neutral donor scattering rate was found to be proportional to the donor concentration and the inverse square root of the magnetic field, the magnitude being much lower than predicted by the Erginsoy relation. The carrier-carrier scattering rate has been the only thing comparable with the existing theoretical predictions. © 1986 The Japan Society of Applied Physics.
DOI: 10.1143/JJAP.25.1518